IRF7759L2PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Optimized for Synchronous Rectification

IRF7759L2PbF
l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
75V min ±20V max 1.8mΩ@ 10V
Q_{g tot}
Q_gd
V_gs(th)
200nC 62nC
3.0V
S
S
D
G
S
S
S
S
S
D
S
Applicable DirectFET Outline and Substrate Outline 
L8
DirectFET™ ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest on-state resistance in a package that has a footprint smaller than a D²PAK and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems.
The IRF7759L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and
makes this device ideal for high performance power converters.
Orderable part number
Package Type
Standard Pack
Form
Quantity
IRF7759L2TRPbF
DirectFET2 Large Can
Tape and Reel
4000
IRF7759L2TR1PbF
DirectFET2 Large Can
Tape and Reel
1000
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
8
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Package Limited)
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
I _D = 96A
1.95
TA= 25°C
6
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Max.
75
±20
160
113
26
375
640
257
96
Units
V
A
mJ
A
VGS = 7.0V
4
T _J = 125°C
2
T _J = 25°C
1.85
VGS = 8.0V
VGS = 10V
1.75
VGS = 15V
0
2 4 6 8 10 12 14 16 18 20
V _GS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1
www.irf.com © 2014 International Rectifier
1.65
15
30
45
60
75
90
105
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.056mH, R_G = 25Ω, I_AS = 96A.
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February 24, 2014