FA38SA50LC Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

FA38SA50LC
16000
14000
12000
10000
8000
6000
4000
2000
0
1
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
C_rss
10
100
V_DS, Drain-to-Source Voltage (V)
20
ID = 38A
16
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
80
160
240
320
400
Q_G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
T_J = 150° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD ,Source-to-Drain Voltage (V)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
1
10
10ms
100
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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