FA38SA50LC Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
VGS
TOP
1 5V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOT T OM 4.5V
10
4.5V
20µ s P U LS E W ID TH
1
TC = 25°C
A
1
10
100
VD _S , Drain-to-So urce V oltage (V )
Fig 1. Typical Output Characteristics
FA38SA50LC
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
1
4.5V _{20µs PULSE WIDTH}
TJ = 150 °C
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 150 ^° C
T_J = 25^° C
10
V _DS= 50V
20µs PULSE WIDTH
1
4
5
6
7
8
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ID = 38A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3