FA38SA50LC Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

l Fully Isolated Package
l Easy to Use and Parallel
l Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
G
l Simple Drive Requirements
l Low Drain to Case Capacitance
l Low Internal Inductance
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
T_J
T_STG
V_ISO
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Thermal Resistance
R_θJC
R_θCS
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
PD - 91615B
FA38SA50LC
HEXFET^® Power MOSFET
D
V_DSS = 500V
R_DS(on) = 0.13Ω
I_D = 38A
S
S O T -2 2 7
Max.
38
24
150
500
4.0
± 20
580
38
50
16
-55 to + 150
2.5
(1.3N•M)
Typ.
–––
0.05
Max.
0.25
–––
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Units
°C/W
1
2/2/99