FA38SA50LC Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

FA38SA50LC
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_s
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
500 ––– ––– V V_GS = 0V, I_D = 1.0mA
––– 0.66 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 0.13 Ω V_GS = 10V, I_D = 23A „
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
22 ––– ––– S V_DS = 25V, I_D = 23A
––– ––– 50
––– ––– 500
µA ^{VDS = 500V, VGS = 0V}
V_DS = 400V, V_GS = 0V, T_J = 125°C
––– ––– 200 _nA V_GS = 20V
––– ––– -200
V_GS = -20V
––– 280 420
I_D = 38A
––– 37 55 nC V_DS = 400V
––– 150 220
V_GS = 10V, See Fig. 6 and 13 „
––– 42 –––
V_DD = 250V
––– 340 ––– _ns I_D = 38A
––– 200 –––
R_G = 10Ω (Internal)
––– 330 –––
R_D = 8Ω, See Fig. 10 „
––– 5.0 ––– nH Between lead,
and center of die contact
––– 6900 –––
V_GS = 0V
––– 1600 ––– pF V_DS = 25V
––– 580 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 38
A ^{showing the}
integral reverse
––– ––– 150
p-n junction diode.
––– ––– 1.3 V T_J = 25°C, I_S = 38A, V_GS = 0V „
––– 830 1300 ns T_J = 25°C, I_F = 38A
––– 15 22 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 0.80mH
R_G = 25Ω, I_AS = 38A. (See Figure 12)
ƒ I_SD ≤ 38A, di/dt ≤ 410A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
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