ISL70419SEH Datasheet, PDF (6/22 Pages) Intersil Corporation – Spectral analysis equipment

ISL70419SEH
Electrical Specifications V_S ± 5V, V_CM = 0, V_O = 0V, T_A = +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; or over a total
ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
V_OS
DESCRIPTION
Input Offset Voltage
CONDITIONS
MIN
MAX
(Note 5) TYP (Note 5) UNIT
10
150
µV
250
µV
TCV_OS
I_B
Offset Voltage Drift
Input Bias Current
guaranteed by characterization not
tested
T_A = -55°C to +125°C
over high and low dose radiation
0.1
1
µV/°C
-2.5
0.08
2.5
nA
-5
5
nA
-15
15
nA
TCI_B
Input Bias Current Temperature
Coefficient
I_OS
Input Offset Current
guaranteed by characterization not
tested
T_A = -55°C to +125°C
over high and low dose radiation
-5
1
5
pA/°C
-2.5
0.08
2.5
nA
-3
3
nA
-10
10
nA
TCI_OS
V_CM
CMRR
PSRR
A_VOL
V_OH
Input Offset Current Temperature
Coefficient
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Open-Loop Gain
Output Voltage High
V_OL
Output Voltage Low
I_S
Supply Current/Amplifier
I_SC
Short-Circuit Current
AC SPECIFICATIONS
GBWP
Gain Bandwidth Product
e_np-p
e_n
e_n
e_n
e_n
in
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
guaranteed by characterization not
tested
guaranteed by CMRR test
V_CM = -3V to +3V
V_S = ±2.25V to ±5V
V_O = -3.0V to +3.0V
R_L = 10k to ground
R_L = 10k to ground
R_L = 2k to ground
R_L = 10k to ground
R_L = 2k to ground
A_V = 1k, R_L = 2k
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 1kHz
-3
0.42
3
pA/°C
-3
3
120
145
120
120
145
120
3,000 14,000
V
dB
dB
dB
dB
V/mV
3.5
3.7
V
3.2
V
3.3
3.55
V
3.0
V
-3.7
-3.5
V
-3.2
V
-3.55
-3.3
V
-3.0
V
0.44
0.625
mA
0.75
mA
43
mA
1.5
0.25
12
8.6
8
8
0.1
MHz
µV_P-P
nV/Hz
nV/Hz
nV/Hz
nV/Hz
pA/Hz
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July 11, 2014
FN8653.0