CD40105BMS Datasheet, PDF (6/10 Pages) Intersil Corporation – CMOS FIFO Register

Specifications CD40105BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Minimum Master Reset
Pulse Width
TWH
VDD = 5V
VDD = 10V
VDD = 15V
Data-In Ready Pulse
Width
TWL
VDD = 5V
VDD = 10V
VDD = 15V
Data-Out Ready Pulse
Width
TWL
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Shift Out Pulse
Width
TWL
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Data Setup
Time
TSU
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Data Hold Time TH VDD = 5V
VDD = 10V
VDD = 15V
Minimum Shift In Pulse
Width
TW VDD = 5V
VDD = 10V
VDD = 15V
Input Capacitance
CIN Any Input
NOTES
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE MIN
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
MAX
200
90
60
520
200
140
440
180
130
180
75
55
0
0
0
350
150
120
200
80
60
7.5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Supply Current
IDD VDD = 20V, VIN = VDD or GND
N Threshold Voltage
VNTH VDD = 10V, ISS = -10µA
N Threshold Voltage Delta ∆VTN VDD = 10V, ISS = -10µA
P Threshold Voltage
VTP VSS = 0V, IDD = 10µA
P Threshold Voltage Delta ∆VTP VSS = 0V, IDD = 10µA
Functional
F
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL VDD = 5V
TPLH
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
1, 2, 3, 4
TEMPERATURE
+25^oC
+25^oC
+25^oC
+25^oC
+25^oC
+25^oC
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
+25^oC
-
3. See Table 2 for +25^oC limit.
4. Read and Record
MAX
25
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25^oC
Limit
UNITS
µA
V
V
V
V
V
ns
7-1322