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ISL6444_07 Datasheet, PDF (5/19 Pages) Intersil Corporation – Dual PWM Controller with DDR Memory Option for Gateway Applications
ISL6444
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Undervoltage Shut-Down Level
Overvoltage Shut-Down
GATE DRIVERS
VUVL
VOVP1
Fraction of the set point; ~2μs noise filter
Fraction of the set point; ~2μs noise filter
70
-
85
%
110
-
130
%
Upper Drive Pull-Up Resistance
R2UGPUP
Upper Drive Pull-Down Resistance
R2UGPDN
Lower Drive Pull-Up Resistance
R2LGPUP
Lower Drive Pull-Down Resistance
R2LGPDN
POWER GOOD AND CONTROL FUNCTIONS
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
-
8
15
Ω
-
3.2
5
Ω
-
8
15
Ω
-
1.8
3
Ω
Power Good Lower Threshold
Power Good Higher Threshold
VPG-
VPG+
Fraction of the set point; ~3μs noise filter
Fraction of the set point; ~3μs noise filter.
Guaranteed by characterization.
-13
-
-7
%
12
-
16
%
PGOODx Leakage Current
PGOODx Voltage Low
EN - Low (Off)
IPGLKG
VPGOOD
VPULLUP = 5.5V
IPGOOD = -4mA
-
-
1
μA
-
0.5 0.85
V
-
-
0.8
V
EN - High (On)
2.5
-
-
V
CCM Enforced (Hysteretic Operation
Inhibited)
VOUTX pulled low
-
-
0.1
V
Automatic CCM/Hysteretic Operation Enabled
VOUTX connected to the output
0.9
-
-
V
DDR - Low (Off)
-
-
0.8
V
DDR - High (On)
2.5
-
-
V
DDR REF Output Voltage
DDR REF Output Current
VDDREF DDR = 1, IREF = 0...10mA
IDDREF DDR = 1. Guaranteed by characterization.
0.99* VOC2 1.01*
V
VOC2
VOC2
-
10
16
mA
5
FN9069.3
April 12, 2007