IRFR420 Datasheet, PDF (5/7 Pages) Intersil Corporation – 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

IRFR420, IRFU420
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
750
600
C_ISS
450
C_OSS
300
150
C_RSS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0
1
2
5
10
2
5
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2
2.4
1.6
0.8
T_J = 25^oC
T_J = 150^oC
100 _{PULSE DURATION = 80µs}
DUTY CYCLE = 0.5% MAX
V_GS = 0V
10
T_J = 150^oC
1
T_J = 25^oC
0
0
0.8
1.6
2.4
3.2
4.0
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 _{ID = 2.5A}
16
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
0
0
4
8
12
16
20
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-411