IRFR420 Datasheet, PDF (3/7 Pages) Intersil Corporation – 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

IRFR420, IRFU420
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I_SD
I_SDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction
D
Rectifier
G
MIN TYP MAX UNITS
-
-
2.5
A
-
-
8
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
t_rr
Q_RR
S
T_J = 25^oC, I_SD = 2.5A, V_GS = 0V (Figure 13)
T_J = 25^oC, I_SD = 2.5A, dI_SD/dt = 100A/µs
T_J = 25^oC, I_SD = 2.5A, dI_SD/dt = 100A/µs
-
-
1.6
V
130 270 540
ns
0.57 1.2 2.3
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 60mH, R_G = 25Ω, peak I_AS = 2.5A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 _0.02
0.01
SINGLE PULSE
10^-2
10^-5
10^-4
P_DM
t₁
NOTES:
t₂
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (s)
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
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