IRFR420 Datasheet, PDF (2/7 Pages) Intersil Corporation – 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

IRFR420, IRFU420
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
IRFR420, IRFU420 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain
T_C = 100^oC . .
Current
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I_D
I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
V
500
V
2.5
A
1.6
A
8
A
±20
V
50
W
0.4
W/^oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
210
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
BV_DSS I_D = 250µA, V_GS = 0V (Figure 10)
500 -
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA
2.0
-
4.0
V
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 125^oC
-
-
25
µA
-
250 µA
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
I_D(ON)
I_GSS
r_DS(ON)
g_fs
t_d(ON)
t_r
t_d(OFF)
V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V
V_GS = ±20V
I_D = 1.3A, V_GS = 10V (Figures 8, 9)
V_DS ≥ 10V, I_D = 2.0A (Figure 12)
V_DD = 250V, I_D ≈ 2.5A, R_GS = 18Ω, R_L = 100Ω,
V_GS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
2.5
-
-
A
-
- ±100 nA
-
2.9 3.0
Ω
1.5 2.2
-
S
-
10 15
ns
-
12 18
ns
-
28 42
ns
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
t_f
-
12 18
ns
Q_g(TOT) V_GS = 10V, I_D = 2.5A, V_DS = 0.8 x Rated BV_DSS
-
13 19 nC
I_G(REF) = 1.5mA (Figure 14)
Q_gs
Gate Charge is Essentially Independent of
Operating Temperature
-
2.2 3.3 nC
Q_gd
-
6.8 10 nC
C_ISS
C_OSS
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 11)
- 350 -
pF
-
54
-
pF
C_RSS
-
9.6
-
pF
Internal Drain Inductance
Internal Source Inductance
L_D
Measured From the Drain Modified MOSFET
-
4.5
-
nH
Lead, 6.0mm (0.25in)
Symbol Showing the
From Package to Center Internal Device
of Die
Inductances
L_S
Measured From the
Source Lead, 6.0mm
(0.25in) From Package to
D
-
7.5
-
nH
L_D
Source Bonding Pad
G
L_S
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
R_θJC
-
R_θJA Mounted on FR-4 Board with Minimum Mounting
-
pad
-
2.5 ^oC/W
-
110 ^oC/W
4-408