IRFR420 Datasheet, PDF (4/7 Pages) Intersil Corporation – 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

IRFR420, IRFU420
Typical Performance Curves Unless Otherwise Specified (Continued)
10
100µs
1.0
1ms
0.1
-1
OPERATION IN THIS
AREA IS LIMITED
BY r_DS(ON)
T_J = MAX RATED
SINGLE PULSE
-10
-100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
10ms
-1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
V_GS = 10V
V_GS = 6.0V
3
V_GS = 5.5V
2
1
V_GS = 5.0V
V_GS 4.0V
V_GS = 4.5V
0
0
4
8
12
16
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
V_GS = 10V
4
V_GS = 20V
2
0
0
2
4
6
8
10
I_D, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5
V_GS = 10V
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 6.0V
3
V_GS = 5.5V
2
V_GS = 5.0V
1
V_GS = 4.0V
V_GS = 4.5V
0
0
50
100
150
200
250
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≥ 50V
1
T_J = 150^oC
T_J = 25^oC
0.1
10^-2
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4 ^{VGS = 10V, ID = 1.3A}
1.8
1.2
0.6
0
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-410