IRFR410 Datasheet, PDF (5/7 Pages) Intersil Corporation – 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

IRFR410, IRFU410
Typical Performance Curves Unless Otherwise Specified (Continued)
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS = 30V
1
25^oC
150^oC
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I_D = 1.5A, V_GS = 10V
2
1
0.1
3
4
5
6
7
8
V_GS, GATE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
300
250
200
150
100
50
0
0
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
C_OSS
C_RSS
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 0V
1
150^oC
25^oC
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 1.5A
18
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 12. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-405