IRFR410 Datasheet, PDF (2/7 Pages) Intersil Corporation – 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

IRFR410, IRFU410
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current
T_C = 100^oC . . . . . . . . .
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I_D
I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (See Figure 5) (Note 4) . . . . . . . . . . . . . . . . . . . . . . .E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
IRFR410, IRFU410
500
500
1.5
1.2
3.0
±20
42
0.33
Refer to UIS Curve
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 3)
Forward Transconductance (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BV_DSS I_D = 250µA, V_GS = 0V
500
∆B-
Reference to 25^oC, I_D = 250µA
-
V_DSS/∆T_J
V_GS(TH) V_GS = V_DS, I_D = 250µA
2
I_DSS V_DS = 500V, V_GS = 0V
-
V_DS = 500V, V_GS = 0V, T_J = 125^oC
-
I_GSS V_GS = ±20V
-
r_DS(ON) I_D = 1.5A, V_GS = 10V, (Figure 9)
-
g_fs
V_DS = 50V, I_DS = 0.75A, (Figure 8)
0.5
t_d(ON) V_DD = 250V, I_D ≈ 1.5A, R_GS = 24Ω, R_L = 167Ω,
-
MOSFET Switching Times are Essentially
t_r
Independent of Operating Temperature
-
t_d(OFF)
-
t_f
-
Q_g(TOT) VGS = 10V, ID ≈ 1.5A, VDS = 0.8 x Rated BV_DSS,
-
(Figure 12)
Q_gs
Gate Charge is Essentially Independent of
-
Operating Temperature
Q_gd
-
C_ISS V_GS = 0V, V_DS = 25V, f = 1.0MHz,
-
(Figure 10)
C_OSS
-
C_RSS
-
TYP MAX UNITS
-
-
V
0.61
-
V/^oC
-
4
V
-
25
µA
-
250
µA
-
±100 nA
-
7.000
Ω
-
-
S
7
-
ns
10
-
ns
24
-
ns
15
-
ns
9
12
nC
1.1
1.4
nC
5
7
nC
210
-
pF
30
-
pF
7
-
pF
4-402