IRFR410 Datasheet, PDF (3/7 Pages) Intersil Corporation – 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

IRFR410, IRFU410
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Internal Drain Inductance
Internal Source Inductance
L_D
Measured From the Modified MOSFET
-
4.5
-
nH
Drain Lead, 6mm
Symbol Showing the
(0.25in) From Package Internal Devices
to Center of Die
Inductances
D
L_S
Measured From The
Source Lead, 6mm
-
7.5
-
nH
L_D
(0.25in) From Header
to Source Bonding Pad G
L_S
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R_θJC
R_θJA
Free Air Operation
-
-
3.0 ^oC/W
-
-
110 ^oC/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I_SD
Modified MOSFET
D
I_SDM
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
1.5
A
-
-
3.0
A
S
Source to Drain Diode Voltage (Note 2)
V_SD
T_J = 25^oC, I_SD = 1.5A, V_GS = 0V, (Figure 11)
-
-
2.0
V
Reverse Recovery Time
t_rr
T_J = 25^oC, I_SD = 1.5A, dI_SD/dt = 100A/µs
130
-
520
ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. V_DD = 50V, starting T_J = 25^oC, L = 40µH, R_G = 25Ω, peak I_AS = 1.5A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
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