IRFR410 Datasheet, PDF (1/7 Pages) Intersil Corporation – 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

Data Sheet
IRFR410, IRFU410
July 1999 File Number 3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17445.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU410
TO-251AA
IFU410
IRFR410
TO-252AA
IFR410
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 1.5A, 500V
• r_DS(ON) = 7.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-401
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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