IRFR320 Datasheet, PDF (5/7 Pages) Intersil Corporation – 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs

IRFR320, IRFU320
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
750
600
C_ISS
450
C_OSS
300
150
C_RSS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0
1
2
5
10
2
5
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
3
2
T_J = 25^oC
T_J = 150^oC
1
0
0
1
2
3
4
5
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 0V
10
T_J = 150^oC
1
T_J = 25^oC
0.1
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 3.1A
16
12
V_DS = 320V
V_DS = 200V
V_DS = 80V
8
4
00
4
8
12
16
20
Q_G(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-399