IRFR320 Datasheet, PDF (1/7 Pages) Intersil Corporation – 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs

Data Sheet
IRFR320, IRFU320
July 1999 File Number 2412.3
3.1A, 400V, 1.800 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17404.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR320
TO-252AA
IFR320
IRFU320
TO-251AA
IFU320
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e., IRFR3209A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 3.1A, 400V
• r_DS(ON) = 1.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
DRAIN
(FLANGE)
DRAIN
SOURCE
4-395
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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