IRFR320 Datasheet, PDF (3/7 Pages) Intersil Corporation – 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs

IRFR320, IRFU320
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I_SD
I_SDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse P-N
D
Junction Rectifier
G
MIN
TYP
MAX UNITS
-
-
3.1
A
-
-
12
A
S
Source to Drain Diode Voltage (Note 2)
V_SD
T_J = 25^oC, I_SD = 3.1A, V_GS = 0V,
(Figure 13)
-
-
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
t_rr
T_J = 25^oC, I_SD = 3.1A, dI_SD/dt = 100A/µs
120
270
600
ns
Q_RR
T_J = 25^oC, I_SD = 3.1A, dI_SD/dt = 100A/µs
0.64
1.4
3.0
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 3.1mH, R_GS = 25Ω, peak I_AS = 3.1A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4.0
3.2
2.4
1.6
0.8
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 ^0.02
0.01
SINGLE PULSE
10^-2
10^-5
10^-4
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (s)
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-397