IRFR320 Datasheet, PDF (2/7 Pages) Intersil Corporation – 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs

IRFR320, IRFU320
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain
T_C = 100^oC . .
Current
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I_D
I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
IRFR320, IRFU320
400
400
3.1
2.0
12
±20
50
0.4
190
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BV_DSS I_D = 250µA, V_GS = 0V, (Figure 10)
400 -
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA
2.0
-
4.0
V
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 125^oC
-
-
25
µA
-
250 µA
I_D(ON) V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V,
(Figure 7)
3.1
-
-
A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
I_GSS V_GS = ±20V
-
- ±100 nA
r_DS(ON) I_D = 1.7A, V_GS = 10V, (Figures 8, 9)
- 1.600 1.800 Ω
g_fs
V_DS ≥ 10V, I_D = 2.0A, (Figure 12)
1.7 2.6
-
S
t_d(ON) V_DD = 200V, I_D ≈ 3.1A, R_GS = 18Ω, R_L = 63Ω,
-
10 15
ns
t_r
V_GS = 10V
-
MOSFET Switching Times are Essentially Indepen-
14 21
ns
t_{d(OFF) dent of Operating Temperature}
-
30 45
ns
t_f
-
13 20
ns
Q_g(TOT) V_GS = 10V, I_D = 3.1A, V_DS = 0.8 x Rated BV_DSS,
-
I_G(REF) = 1.5mA, (Figure 14)
Q_gs
Gate Charge is Essentially Independent of Operat- _-
ing Temperature
Q_gd
-
13 20 nC
2.2 3.3 nC
7.2 11 nC
C_ISS V_DS = 25V, V_GS = 0V, f = 1MHz, (Figure 11)
- 350 -
pF
C_OSS
-
64
-
pF
C_RSS
-
8.1
-
pF
L_D
Measured From the Drain Modified MOSFET
-
4.5
-
nH
Lead, 6.0mm (0.25in) from Symbol Showing the
Package to Center
Internal Device
of Die
Inductances
L_S
Measured From the
D
Source Lead, 6.0mm
L_D
(0.25in) from Package to
-
7.5
-
nH
Source Bonding Pad
G
L_S
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R_θJC
R_θJA
Typical Solder Mount
S
-
-
2.5 ^oC/W
-
-
110 ^oC/W
4-396