IRF9140 Datasheet, PDF (5/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9140
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
2000
1600
1200
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
800
C_OSS
400
C_RSS
00
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
80µs PULSE TEST
12
9
6
T_J = -55^oC
T_J = 25^oC
T_J = 125^oC
3
0
0
-20
-40
-60
-80
-100
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
-5
-10
10²
5
2
T_J = 150^oC
10
5
T_J = 25^oC
2
1.0
5
2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
I_D = -24A
V_DS = -20V
V_DS = -50V
V_DS = -80V
-15
-20
0
20
40
60
80
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-18