IRF9140 Datasheet, PDF (3/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9140
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I_SD
Modified MOSFET
Symbol Showing the In-
D
I_{SDM tegral Reverse}
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
-19
A
-
-
-76
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
V_SD
t_rr
Q_RR
T_J = 25^oC, I_SD = -19A, V_GS = 0V
T_J = 150^oC, I_SD = 19A, dI_SD/dt = 100A/µs
T_J = 150^oC, I_SD = -19A, dI_SD/dt = 100A/µs
-
-
-1.5
V
-
170
-
ns
-
0.8
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 25V, starting T_J = 25^oC, L = 4µH, R_G = 25Ω, peak I_AS = 19A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-20
-15
-10
-5
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10^-5
10^-4
P_DM
t₁
t₂ t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
10^-3
10^-2
0.1
1
10
t₁, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-16