IRF9140 Datasheet, PDF (1/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

Data Sheet
IRF9140
February 1999 File Number 2278.3
-19A, -100V, 0.200 Ohm, P-Channel Power
MOSFET
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17521.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9140
TO-204AA
IRF9140
NOTE: When ordering, include the entire part number.
Features
• -19A, -100V
• r_DS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
5-14
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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