IRF9140 Datasheet, PDF (4/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9140
Typical Performance Curves Unless Otherwise Specified (Continued)
10²
10µs
100µs
1ms
10
OPERATION IN THIS
REGION IS LIMITED
BY r_DS(ON)
1
10ms
100ms
DC
T_J = MAX RATED
TR_CJC==251^ooCC/W
SINGLE PULSE
0.1
1
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-100
-80
-60
-40
-20
0
0
V_GS = -16V
V_GS = -14V ^{80µs PULSE TEST}
V_GS = -12V
V_GS = -10V
V_GS = -9V
V_GS = -8V
V_GS = -7V
V_GS = -6V
V_GS = -5V _{VGS = -4V}
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
-50
80µs PULSE TEST
-40
-30
V_GS = -16V _{VGS = -12V}
V_GS = -14V
V_GS = -10V
V_GS = -9V
V_GS = -8V
-20
V_GS = -7V
-10
0
0
V_GS = -6V
V_GS = -5V
V_GS = -4V
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
-10²
80µs PULSE TEST
-5
-2
-10
-5
-2
-1.0
-5
-2
-0.1
0
T_J = 125^oC
T_J = 25^oC
T_J = -55^oC
-2
-4
-6
-8
-10
-12
-14
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
0.26
80µs PULSE TEST
0.22
V_GS = -10V
0.18
0.14
V_GS = -20V
0.10
0
0
-20
-40
-60
-80
-100
I_D, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
I_D = -10A
V_GS = -10V
2.0
1.5
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
5-17