IRF9130 Datasheet, PDF (5/7 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

IRF9130
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
400
C_OSS
200
0
0
C_RSS
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
T_J = -55^oC
T_J = 25^oC
4
T_J = 125^oC
3
PULSE DURATION = 80µs
2
1
0
-4
-8
-12
-16
-20
I _D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
T_J = 150^oC
-10
-1.0
T_J = 25^oC
-0.1
-0.4 -0.6 -0.8
-1.0 -1.2 -1.4
-1.6 -1.8
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
I_D = 15A
-5
V_DS = -80V
V_DS = -50V
-10
V_DS = -20V
-15
0
8
16
24
32
40
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-12