IRF9130 Datasheet, PDF (2/7 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

IRF9130
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain
T_C = 100^oC . .
Current
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I_D
I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
IRF9130
-100
-100
-12
-7.5
-48
±20
75
0.6
500
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to T_J = 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
BV_DSS
V_GS(TH)
I_DSS
I_D(ON)
I_GSS
r_DS(ON)
g_fs
I_D = -250µA, V_GS = 0V, (Figure 10)
V_GS = V_DS, I_D = -250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC
V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = -10V
V_GS = ±20V
I_D = -6.5A, V_GS = -10V, (Figures 8, 9)
V_DS > I_D(ON) x r_DS(ON)MAX, I_D = -6.5A
(Figure 12)
-100
-2
-
-
-12
-
-
2
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
t_d(ON) V_DD = 0.5 x Rated BV_DSS, I_D ≈ -6.5A, R_G = 50Ω
-
t_r
R_L = 5.7Ω (Figures 17, 18)
MOSFET Switching Times are Essentially
-
t_{d(OFF) Independent of Operating Temperature}
-
t_f
-
Q_g(TOT) V_GS = -10V, I_D = -15A, V_DS = 0.8 x Rated BV_DSS
-
I_g(REF) = -1.5mA (Figures 14, 19, 20)
Q_gs
Gate Charge is Essentially Independent of
Operating Temperature
-
Q_gd
-
C_ISS V_DS = -25V, V_GS = 0V, f = 1MHz
-
C_OSS ^{(Figure 11)}
-
C_RSS
-
L_D
Measured Between the Modified MOSFET
-
Contact Screw on the
Symbol Showing the
Flange that is Closer to Internal Devices
Source and Gate Pins and Inductances
the Center of Die
D
Internal Source Inductance
L_S
Measured From the
Source Lead, 6mm
L_D
-
(0.25in) From the Flange
G
and the Source
L_S
Bonding Pad
S
Thermal Resistance Junction to Case
R_θJC
-
Thermal Resistance Junction to Ambient
R_θJA Typical Socket Mount
-
TYP MAX UNITS
-
-
V
-
-4
V
-
-25
µA
-
250
µA
-
-
A
- ±100 nA
0.25 0.30
Ω
3.7
-
S
30
60
ns
70 140
ns
70 140
ns
70 140
ns
25
45
nC
13
-
nC
12
-
nC
500
-
pF
300
-
pF
100
-
pF
5.0
-
nH
12.5 -
nH
-
1.67 ^oC/W
-
30 ^oC/W
5-9