IRF9130 Datasheet, PDF (3/7 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

IRF9130
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I_SD
I_SDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
-12
A
D
-
-
-48
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
t_rr
Q_RR
T_C = 25^oC, I_SD = -12A, V_GS = 0V (Figure 13)
T_J =150^oC, I_SD = -12A, dI_SD/dt = 100A/µs
T_J = 150^oC, I_SD = -12A, dI_SD/dt = 100A/µs
-
-
-1.5
V
-
300
-
ns
-
1.8
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 25V, starting T_J = 25^oC, L = 5.2mH, R_G = 25Ω, peak I_AS = 12A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_A, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-12.0
-9.6
-7.2
-4.8
-2.4
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10^-5
10^-4
P_DM
10^-3
10^-2
10^-1
t₁, RECTANGULAR PULSE DURATION (s)
t₁
NOTES:
t₂
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-10