IRF9130 Datasheet, PDF (1/7 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

Data Sheet
IRF9130
February 1999 File Number 2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power
MOSFET
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9130
TO-204AA
IRF9130
NOTE: When ordering, use the entire part number.
Features
• -12A, -100V
• r_DS(ON) = 0.30Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
5-8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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