IRF620 Datasheet, PDF (5/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRF620
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
400
200
0
0
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
C_OSS
C_RSS
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4 ^{VDS > ID(ON) x rDS(ON) MAX}
3
2
T_J = -55^oC
T_J = 25^oC
T_J = 125^oC
1
0
0
2
4
6
8
10
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
PULSE DURATION = 80µs
100 DUTY CYCLE = 0.5% MAX
10
T_J = 25^oC
T_J = 150^oC
T_J = 150^oC
T_J = 25^oC
1
0
1
2
3
4
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 6A
15
10
5
V_DS = 40V
V2_D0_S = 100V
V_DS = 160V
0
0
4
8
12
16
20
Q_g, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-200