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IRF620 Datasheet, PDF (3/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |||
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IRF620
Source to Drain Diode Speciï¬cations
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
D
Rectifier
G
MIN TYP MAX UNITS
-
-
5.0
A
-
-
20
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13)
TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs
-
-
1.8
V
- 350 -
ns
-
2.3
-
µC
NOTES:
2. Pulse test: pulse width ⤠300µs, duty cycle ⤠2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50â¦, peak IAS = 5A.
Typical Performance Curves Unless Otherwise Speciï¬ed
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-198
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