English
Language : 

IRF620 Datasheet, PDF (2/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
◁
IRF620
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF620
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
V
200
V
5.0
A
3.0
A
20
A
±20
V
40
W
0.32
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
85
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS VGS = 0V, ID = 250µA, (Figure 10)
200
-
-
V
VGS(TH) VDS = VGS, ID = 250µA
2.0
-
4.0
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
-
25
µA
-
250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
5.0
-
-
A
IGSS VGS = ±20V
-
- ±100 nA
rDS(ON) VGS = 10V, ID = 2.5A, (Figures 8, 9)
-
0.8 1.2
Ω
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A (Figure 12) 1.3 2.5
-
S
td(ON)
tr
td(OFF)
VDD = 100V, ID ≈ 5.0A, RG = 9.1Ω, RL = 20Ω,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-
20 40
ns
-
30 60
ns
-
50 100 ns
tf
-
30 60
ns
Qg(TOT)
Qgs
Qgd
VGS = 10V, ID = 5.0A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-
11
15
nC
-
5.0
-
nC
-
6.0
-
nC
CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
-
450
-
pF
COSS
-
150
-
pF
CRSS
-
40
-
pF
LD
Measured from the Contact Modified MOSFET
-
3.5
-
nH
Screw on Tab to Center of Symbol Showing the
Die
Internal Devices
Measured from the Drain
Lead, 6mm (0.25in) from
Inductances
D
-
4.5
-
nH
Package to Center of Die
LD
LS
Measured from the Source
-
7.5
-
nH
Lead, 6mm (0.25in) from
G
Header to Source Bonding
LS
Pad
S
RθJC
RθJA
Free Air Operation
-
-
3.12 oC/W
-
-
62.5 oC/W
4-197
 ▷