IRF620 Datasheet, PDF (4/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRF620
Typical Performance Curves Unless Otherwise Specified (Continued)
100
OPERATION IN THIS AREA IS LIMITED BY r_DS(ON)
10
10µs
100µs
1
0.1
1
1ms
T_J = MAX RATED
T_C = 25^oC
SINGLE PULSE
10ms
100ms
DC
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
10V
8
6
7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
6V
4
5V
2
4V
0
0
20
40
60
80
100
V_DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5
V_GS = 10V
V_GS = 8V
4
V_GS = 6V
V_GS = 5V
3
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
V_GS = 4V
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
1.5
V_GS = 10V
1.0
0.5
V_GS = 20V
0
0
5
10
15
20
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2.0µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-199
10 _{PULSE DURATION = 80µs}
DUTY CYCLE = 0.5% MAX
V_DS > I_D(ON) x r_{DS(ON) MAX}
8
6
4
T_J = 125^oC
2
T_J = 25^oC
T_J = -55^oC
0
0
2
4
6
8
10
V_G, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.8 ^{VGS = 10V, ID = 2A}
1.4
1
0.6
0.2
-40
0
40
80
120
T_J , JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE