RFP70N03 Datasheet, PDF (4/16 Pages) Fairchild Semiconductor – 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

RFP70N03, RF1S70N03SM
Typical Performance Curves (Continued)
200
V_GS = 10V
160
120
V_GS = 8V
V_GS = 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = 6V
80
V_GS = 5V
40
V_GS = 4V
0
0
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 10V, I_D = 70A
1.5
1.0
0.5
0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
I_D = 250µA
1.6
1.2
0.8
0.4
0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
160 ^{VDD = 15V}
120
80
-55^oC
25^oC
175^oC
40
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.0
V_GS = V_DS, I_D = 250µA
1.6
1.2
0.8
0.4
0
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
7000
6000
5000
4000
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS = C_DS + C_GD
3000
2000
1000
C_OSS
C_RSS
0
0
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
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