RFP70N03 Datasheet, PDF (3/16 Pages) Fairchild Semiconductor – 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

RFP70N03, RF1S70N03SM
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10⁰
0.5
0.2
10^{-1 0.1}
0.05
0.02
0.01
10^-₁²_0-5
SINGLE PULSE
10^-4
10^-3
10^-2
10^-1
t₁, RECTANGULAR PULSE DURATION (s)
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
10^-0
10¹
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
300
100µs
100
1ms
OPERATION IN THIS
AREA MAY BE
10 LIMITED BY r_DS(ON)
T_C = 25^oC
T_J = MAX RATED
1 ^{SINGLE PULSE}
1
V_DSS(MAX) = 30V
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
50
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
300
I_DM
STARTING T_J = 25^oC
STARTING T_J = 150^oC
100
If R = 0
t_AV = (L) (I_AS)/(1.3 x RATED BV_DSS - V_DD)
If R ≠ 0
10 ^{tAV = (L/R) ln [(IAS x R)/(1.3 x RATED BVDSS - VDD) +1]}
0.01
0.10
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
3