RFP70N03 Datasheet, PDF (15/16 Pages) Fairchild Semiconductor – 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

RFP70N03, RF1S70N03SM
PSPICE Electrical Model
.SUBCKT RFP70N03 2 1 3 ;
*NOM TEMP = 25^oC
rev 9/16/92
CA 12 8 6.09e-9
CB 15 14 6.05e-9
CIN 6 8 3.40e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 35.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.10e-9
LSOURCE 3 7 1.82e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 30.7e-6
RGATE 9 20 0.890
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.92e-3
RVTO 18 19 RVTOMOD 1
5
10
DPLCAP
-
ESG
+
6
8
16
VTO
GATE
1
LGATE
EVTO
9
20
-
18
RGATE ⁸
-
6
RIN
CIN
RDRAIN
DBREAK
21
MOS1
MOS2
11 ₊
EBREAK
17
18 _-
DRAIN
2
LDRAIN
DBODY
S1A
12 ₁₃
8
S2A
14 ¹⁵
13
8
RSOURCE
7 ^LSOURCE
3
SOURCE
RBREAK
17
18
S1B
S2B
13
CA
CB
+
EGS
-
6
8
+
EDS
-
14
5
8
RVTO
IT
19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.605
.MODEL DBDMOD D (IS=7.91e-12 RS=3.87e-3 TRS1=2.71e-3 TRS2=2.50e-7 CJO=4.84e-9 TT=4.51e-8)
.MODEL DBKMOD D (RS=3.9e-2 TRS1=1.05e-4 TRS2=3.11e-5)
.MODEL DPLCAPMOD D (CJO=4.8e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.46 KP=47 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.46e-4 TC2=-8.48e-7)
.MODEL RDSMOD RES (TC1=2.23e-3 TC2=6.56e-6)
.MODEL RVTOMOD RES (TC1=-3.29e-3 TC2=3.49e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8.35 VOFF=-6.35)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.35 VOFF=-8.35)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=3.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.0 VOFF=-2.0)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
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