RFP70N03 Datasheet, PDF (2/16 Pages) Fairchild Semiconductor – 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

RFP70N03, RF1S70N03SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
30
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
70
A
200
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Figures 5, 13, 14
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
150
W
1.0
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
o_C
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
MIN
BV_DSS I_D = 250µA, V_GS = 0V (Figure 10)
30
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 9)
2
I_DSS
V_DS = 30V, V_GS = 0V
-
V_DS = 30V, V_GS = 0V, T_C = 150^oC
-
I_GSS
V_GS = ±20V
-
r_DS(ON) I_D = 70A, V_GS = 10V (Figure 8)
-
t_ON
V_DD = 15V, I_D ≅ 70A,
-
t_d(ON)
R_L = 0.214Ω, V_GS = 10V,
R_GS = 2.5Ω
-
t_r
-
t_d(OFF)
-
t_f
-
t_OFF
-
Q_g(TOT) V_GS = 0V to 20V V_DD = 24V, I_D ≅ 70A,
-
Q_g(10)
V_GS = 0V to 10V
R_L = 0.343Ω
I_g(REF) = 1.0mA
-
Q_g(TH) V_GS = 0V to 2V ^{(Figure 12)}
-
C_ISS
V_DS = 25V, V_GS = 0V,
-
f = 1MHz
C_{OSS (Figure 11)}
-
C_RSS
-
R_θJC (Figure 3)
-
R_θJA
TO-220, TO-263
-
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
V_SD
I_SD = 70A
-
t_rr
I_SD = 70A, dI_SD/dt = 100A/µs
-
TYP
-
-
-
-
-
-
-
20
20
40
25
-
215
120
6.5
3300
1750
750
-
-
MAX
-
4
1
50
100
0.010
80
-
-
-
-
125
260
145
8.0
-
-
-
1.0
62
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o_C/W
o_C/W
TYP
MAX UNITS
-
1.5
V
-
125
ns
2