RFP4N100 Datasheet, PDF (4/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

RFP4N100, RF1S4N100SM
Typical Performance Curves T_C = 25^oC, Unless Otherwise Specified (Continued)
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4 ^{VDS = 15V}
3
2
150^oC
25^oC
1
0
0
2
4
6
8
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
6
V_GS = 10V
PULSE DURATION = 80µs
5 _{DUTY CYCLE = 0.5% MAX}
4
3
2
1
0
0
2
4
6
8
10
12
I_D, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3.0
V_GS = 10V, I_D = 4.3A
PULSE DURATION = 80µs
2.5 ^{DUTY CYCLE = 0.5% MAX}
2.0
1.5
1.0
0.5
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.3
I_D = 250µA
1.2
1.1
1.0
0.9
0.8
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2500
2000
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
1500
1000
500
C_OSS
C_RSS
0
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
100
T_J = 150^oC
T_J = 25^oC
10
1
0.1
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. DRAIN CURRENT vs SOURCE TO DRAIN DIODE
VOLTAGE
4-531