RFP4N100 Datasheet, PDF(1/6 Page) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

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RFP4N100 Datasheet, PDF (1/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

Data Sheet

RFP4N100, RF1S4N100SM

August 1999 File Number 2457.4

4.3A, 1000V, 3.500 Ohm, High Voltage,

N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel

enhancement mode silicon gate power field effect

transistors. They are designed for use in applications such

as switching regulators, switching converters, motor

drivers, relay drivers, and drivers for high power bipolar

switching transistors requiring high speed and low gate

drive power. This type can be operated directly from an

integrated circuit.

Formerly developmental type TA09850.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP4N100

TO-220AB

RFP4N100

RF1S4N100SM

TO-263AB

F1S4N100

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

Features

â¢ 4.3A, 1000V

â¢ rDS(ON) = 3.500â¦

â¢ UIS Rating Curve (Single Pulse)

â¢ -55oC to 150oC Operating Temperature

â¢ Related Literature

- TB334 âGuidelines for Soldering Surface Mount

Components to PC Boardsâ

Symbol

JEDEC TO-263AB

GATE

SOURCE

DRAIN

(FLANGE)

4-528

CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.

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