RFP4N100 Datasheet, PDF (3/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

RFP4N100, RF1S4N100SM
Typical Performance Curves T_C = 25^oC, Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
RFP4N100, RF1S4N100SM
10
10µs
100µs
1
OPERATION IN THIS
AREA MAY BE LIMITED
BY r_DS(ON)
0.1
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
DC
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
100
IF R = 0
t_av = (L)(I_as) / (1.3 x RATED BV_DSS - V_DD)
IF R ≠ 0
t_av = (L/R) In ((I_as x R) / (1.3 x RATED BV_DSS - V_DD) + 1)
Idm
10
STARTING
STARTING
T_J
T_J
=
=
25^oC
150^oC
1
0.01
0.10
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
10
V_GS = 10V
8
V_GS = 6V
6
V_GS = 5V
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2
V_GS = 4V
0
0
100
200
300
400
500
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
V_GS = 10V
V_GS = 6V
6
V_GS = 5V
4
2
V_GS = 4V
0
0
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
4-530