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| RFP4N100 Datasheet, PDF (2/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | |||
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RFP4N100, RF1S4N100SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
RFP4N100,
RF1S4N100SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
1000
V
Drain to Gate Voltage (RGS = 20kâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
1000
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
4.3
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
17
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
(See UIS SOA Curve)
mJ
(Figures 4, 14, 15)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
150
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
BVDSS ID = 250µA, VGS = 0V (Figure 10)
VGS(TH) VGS = VDS, ID = 250µA
IDSS
VDS = 1000V, VGS = 0V
VDS = 800V, VGS = 0V, TC = 150oC
IGSS VGS = ±20V
rDS(ON) ID = 2.5A, VGS = 10V (Figures 8, 9)
td(ON)
tr
VDD = 500V, ID â 3.9A, RGS = 9.1â¦,
RL = 120â¦)
td(OFF)
tf
Qg(TOT) VGS = 20V, ID = 3.9A, VDS = 800V
(Figure 13)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 4.3A
Reverse Recovery Time
trr
ISD = 3.9A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ⤠80µs, duty cycle ⤠2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP
1000
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
4
25
100
±100
3.500
30
50
170
50
120
UNITS
V
V
µA
µA
nA
â¦
ns
ns
ns
ns
nC
-
-
0.83 oC/W
-
-
62
oC/W
MIN
TYP
MAX UNITS
-
-
1.8
V
-
-
1000
ns
4-529
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