English
Language : 

ISL6210 Datasheet, PDF (4/10 Pages) Intersil Corporation – Dual Synchronous Rectified MOSFET Drivers
ISL6210
Absolute Maximum Ratings
Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (VEN, VPWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (VBOOT-GND). . . -0.3V to 33V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (VBOOT-PHASE) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 30V (DC)
GND -8V (<20ns Pulse Width, 10μJ)
UGATE Voltage . . . . . . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT
VPHASE - 5V (<20ns Pulse Width, 10μJ) to VBOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5μJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C
HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Thermal Information
Thermal Resistance (Notes 1 and 2)
θJA(°C/W) θJC(°C/W)
QFN Package . . . . . . . . . . . . . . . . . .
46
8.5
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . .-10°C to +100°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
2. θJC, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications These specifications apply for TA = -10°C to +100°C, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
SUPPLY CURRENT
Bias Supply Current
POWER-ON RESET
IVCC
PWM pin floating, VVCC = 5V
-
170
-
μA
POR Rising
-
3.4
4.2
V
POR Falling
2.6
3.0
-
V
Hysteresis
-
400
-
mV
BOOTSTRAP DIODE
Forward Voltage Drop
PWM INPUT
VF
VVCC = 5V, forward bias current = 2mA
0.3
0.60
0.7
V
Sinking Impedance
Source Impedance
Three-State Rising Threshold
Three-State Falling Threshold
Three-State Shutdown Holdoff Time
Three-state to UG/LG Rising Propagation
Delay
RPWM_SNK
RPWM_SRC
tTSSHD
tPTS
VVCC = 5V
VVCC = 5V
tPDLU or tPDLL + Gate Falling Time
8.0
10.4
15
kΩ
8.3
10.6
25
kΩ
1.08
1.3
1.5
V
3.4
3.65 3.98
V
-
80
-
ns
-
20
-
ns
SWITCHING TIME (See Figure 1)
UGATE Rise Time (Note 3)
LGATE Rise Time (Note 3)
UGATE Fall Time (Note 3)
LGATE Fall Time (Note 3)
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
UGATE Turn-On Propagation Delay
LGATE Turn-On Propagation Delay
tRU
VVCC = 5V, 3nF Load
-
8.0
-
ns
tRL
VVCC = 5V, 3nF Load
-
8.0
-
ns
tFU
VVCC = 5V, 3nF Load
-
8.0
-
ns
tFL
VVCC = 5V, 3nF Load
-
4.0
-
ns
tPDLU VVCC = 5V, Outputs Unloaded
-
20
-
ns
tPDLL
VVCC = 5V, Outputs Unloaded
-
27
-
ns
tPDHU VVCC = 5V, Outputs Unloaded; RSET = 0Ω
-
26
-
ns
tPDHL
VVCC = 5V, Outputs Unloaded; RSET = 0Ω
-
26
-
ns
4
FN6392.0
November 28, 2006