IRFPG40 Datasheet, PDF (4/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET

IRFPG40
Typical Performance Curves Unless Otherwise Specified (Continued)
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
5 ^VGS ^{= 10V}
4
3
2
1
0
0
2
4
6
8
10
12
I_D, DRAIN CURRENT (A)
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
PULSE DURATION = 80µs
2.7 DUTY CYCLE = 0.5% MAX
I_D = 2.5A, V_GS = 10V
2.5
2.2
2.0
1.7
1.5
1.3
1.0
0.8
0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.3 _{ID = 250µA}
1.2
1.1
1.0
0.9
0
-60 -40 -20 0 20 40 60 80 100 120 140 150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs. JUNCTION TEMPERATURE
3000
2500
C_ISS
2000 _COSS
1500
1000
C_RSS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
500
0
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≥ 70V
6
4
2
25^oC
150^oC
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150^oC
10
25^oC
1
0
0
1
2
3
4
5
6
I_D, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
0.1
0
0.3
0.6
0.9
1.2
1.5
SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
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