IRFPG40 Datasheet, PDF (2/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET

IRFPG40
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DSS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
IRFPG40
1000
1000
4.3
17
±20
150
1.2
490
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/ ^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
g_fs
t_d(ON)
t_r
t_d(OFF)
t_f
Q_g(TOT)
R_θJC
R_θJA
I_D = 250µA, V_GS = 0V (Figure 9)
V_DS = V_GS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 150^oC
V_GS = ±20V
I_D = 2.5A, V_GS = 10V (Figures 7, 8)
I_D = 2.5A, V_DS = 100V (Figure 11)
V_DD = 500V, I = 3.9A, R_GS = 9.1Ω, R_L = 120Ω
V_GS = 10V
I_D = 3.9A, V_DS = 800V, V_GS = 10V (Figure 13)
Free Air Operation
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
V_SD
I_SD = 4.3A (Figure 12)
Reverse Recovery Time
t_rr
I_SD = 3.9A, dl_SD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature.
4. V_DD = 25V, starting T_J = 25^oC, L = 640µH, R_G = 25Ω, peak I_AS = 9.2A (Figure 3).
MIN
1000
2.0
-
-
-
-
3.5
-
-
-
-
-
-
-
MAX
-
4.0
25
250
±100
3.5
-
30
50
170
50
120
0.83
40
UNITS
V
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
nC
o_C/W
o_C/W
MIN MAX UNITS
-
1.8
V
-
1000
ns
4-366