IRFPG40 Datasheet, PDF (3/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET

IRFPG40
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
100 _{TJ = MAX RATED, TC = 25}o_C
SINGLE PULSE
10
1
0.10
0.01
1
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
10ms
DC
1000
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
100
If R = 0
t_AV = (L)(I_AS)/(1.3 RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R) In[(Ias x R)/(1.3 RATED BV_DSS - V_DD) + 1]
I_DM
10
STARTING T_J = 25^oC
10
V_GS = 10V
V_GS = 6V
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
6
V_GS = 5V
4
1
0.01
STARTING T_J = 150^oC
0.10
1.00
TIME IN AVALANCHE (ms)
10.00
FIGURE 3. UNCLAMPED INDUCTIVE SWITCHING SOA
2
V_GS = 4V
0
0
100
200
300
400
500
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8 ^{TC = 25oC}
V_GS = 10V
V_GS = 6V
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS = 7V
4
6
V_GS = 5V
4
2
V_GS = 4V
0
0
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
3
2
150^oC
25^oC
1
0
0
2
4
6
8
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
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