IRFPG40 Datasheet, PDF (1/6 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET

Data Sheet
IRFPG40
July 1999 File Number 2879.2
4.3A, 1000V, 3.500 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09850.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFPG40
TO-247
IRFPG40
NOTE: When ordering, include the entire part number.
Features
• 4.3A, 1000V
• r_DS(ON) = 3.500Ω
• UIS SOA Rating Curve (Single Pulse)
• -55^oC to 150^oC Operating and Storage Temperature
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
4-365
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999