IRF840 Datasheet, PDF (4/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF840
Typical Performance Curves Unless Otherwise Specified (Continued)
10²
10µs
10
100µs
OPERATION IN THIS
1
REGION IS LIMITED
BY r_DS(ON)
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
0.1
1
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
DC
10³
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
15
V_GS = 10V
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 6.0V
9
V_GS = 5.5V
6
3
V_GS = 5.0V
V_GS = 4.5V
V_GS = 4.0V
0
0
50
100
150
200
250
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
V_GS = 10V
9
V_GS = 6.0V
6
V_GS = 5.5V
3
V_GS = 5.0V
V_GS = 4.0V _{VGS = 4.5V}
0
0
3
6
9
12
15
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≥ 50V
10
1
T_J = 150^oC
T_J = 25^oC
0.1
0.01
0
2
4
6
8
10
V_SD, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
V_GS = 10V
4
2
V_GS = 20V
0
0
8
16
24
32
40
T_C, CASE TEMPERATURE (^oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
VOLTAGE AND DRAIN CURRENT
4-260
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I_D = 4.4A, V_GS = 10V
2.4
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE