IRF840 Datasheet, PDF (2/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF840
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
IRF840
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS
500
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
500
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
8.0
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
5.1
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
32
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
125
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
V
V
A
A
A
V
W
W/^oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
510
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BV_DSS V_GS = 0V, I_D = 250µA (Figure 10)
500
V_GS(TH) V_GS = V_DS, I_D = 250µA
2.0
I_DSS
V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 125^oC
-
I_D(ON) V_DS > I_{D(ON) x} r_DS(ON)MAX, V_GS = 10V
8.0
I_GSS
V_GS = ±20V
-
r_DS(ON) V_GS = 10V, I_D = 4.4A (Figures 8, 9)
-
g_fs
V_DS ≥ 50V, I_D = 4.4A (Figure 12)
4.9
t_D(ON) V_DD = 250V, I_D ≈ 8A, R_G = 9.1Ω, R_L = 30Ω
-
t_r
MOSFET Switching Times are Essentially
Independent of Operating Temperature.
-
t_D(OFF)
-
t_f
-
Q_g(TOT) V_GS = 10V, I_D = 8A, V_DS = 0.8 x Rated BV_DSS
-
I_g(REF) = 1.5mA (Figure 14) Gate Charge is
Q_gs
Essentially Independent of Operating
Temperature
-
Q_gd
-
C_ISS V_GS = 0V, V_DS = 25V, f = 1.0MHz (Figure 11)
-
C_OSS
-
C_RSS
-
L_D
Measured from the
Modified MOSFET
-
Contact Screw on Tab Symbol Showing the
to Center of Die
Internal Devices
Measured from the Drain ^Inductances
-
Lead, 6mm (0.25in) from
D
Package to Center of Die
L_D
L_S
Measured from the
-
Source Lead, 6mm
G
(0.25in) from Header to
L_S
Source Bonding Pad
S
Thermal Resistance Junction to Case
R_θJC
-
Thermal Resistance Junction to Ambient
R_θJA
Free Air Operation
-
TYP MAX UNITS
-
-
V
-
4.0
V
-
25
µA
-
250
µA
-
-
A
-
±100 nA
0.8 0.85
Ω
7.4
-
S
15
21
ns
21
35
ns
50
74
ns
20
30
ns
42
63
nC
7.0
-
nC
22
-
nC
1225
-
pF
200
-
pF
85
-
pF
3.5
-
nH
4.5
-
nH
7.5
-
nH
-
1.0 ^oC/W
-
62.5 ^oC/W
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