IRF840 Datasheet, PDF (3/7 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF840
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
TEST CONDITIONS
I_SD
I_SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
D
Junction Diode
G
MIN TYP MAX UNITS
-
-
8.0
A
-
-
32
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
V_SD
T_J = 25^oC, I_SD = 8.0A, V_GS = 100A/µs (Figure 13)
-
-
2.0
V
t_rr
T_J = 25^oC, I_SD = 8.0A, dI_SD/dt = 100A/µs
210 475 970
ns
Q_RR
T_J = 25^oC, I_SD = 8.0A, dI_SD/dt = 100A/µs
2.0
4.6
8.2
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 14mH, R_G = 25Ω, peak I_AS = 8A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10^-2
10^-3_10-5
SINGLE PULSE
10^-4
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (s)
P_DM
t₁
t₂ t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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