CD4508BMS Datasheet, PDF (4/9 Pages) Intersil Corporation – CMOS Dual 4-Bit Latch

Specifications CD4508BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
Propagation Delay
Data In to Data Out
TPHL2 VDD = 5V
TPLH2 _{VDD = 10V}
VDD = 15V
Propagation Delay
Reset to Data Out
TPHL3 VDD = 5V
TPLH3 _{VDD = 10V}
VDD = 15V
Propagation Delay
3-State
TPHZ VDD = 5V
TPZH _{VDD = 10V}
VDD = 15V
Transition Time
3-State
TPLZ VDD = 5V
TPZL _{VDD = 10V}
VDD = 15V
Transition Time
TTHL VDD = 10V
TTLH _{VDD = 15V}
Minimum Strobe Pulse
Width
TWS
VDD = 5V
VDD = 10V
VDD = 15V
Minimum Data Setup
Time
TS VDD = 5V
VDD = 10V
VDD = 15V
Minimum Data Hold Time TH VDD = 5V
VDD = 10V
VDD = 15V
Minimum Reset Pulse
Width
TWR
VDD = 5V
VDD = 10V
VDD = 15V
Input Capacitance
CIN Any Input
NOTES
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE MIN
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
+25^oC
-
MAX
210
120
90
180
100
80
180
100
70
180
100
70
100
80
140
80
70
50
30
20
0
0
0
200
140
100
7.5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
PARAMETER
Supply Current
N Threshold Voltage
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
SYMBOL
CONDITIONS
IDD VDD = 20V, VIN = VDD or GND
VNTH VDD = 10V, ISS = -10µA
NOTES
1, 4
1, 4
TEMPERATURE
+25^oC
+25^oC
LIMITS
MIN MAX
-
25
-2.8
-0.2
UNITS
µA
V
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
1151