ISL6296_07 Datasheet, PDF (3/19 Pages) Intersil Corporation – FlexiHash™ For Battery Authentication

ISL6296
Absolute Maximum Ratings (Reference to GND)
Supply Voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
All Other Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5 to VDD+0.5V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7) . . .4000V
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . . .400V
CDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . .-20°C to +85°C
Thermal Information
Thermal Resistance (Typical)
θ_JA (°C/W) θ_JC (°C/W)
SOT-23 Package (Note 1) . . . . . . . . . . 200
N/A
2x3 TDFN Package (Notes 2, 3) . . . . .
70
10.5
Maximum Junction Temperature (Plastic Package) . . . . . . . +125°C
Maximum Storage Temperature Range . . . . . . . . . .-40°C to +125°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ_JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θ_JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For θ_JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows: T_A = -20°C to +85°C; V_DD = 2.6V to 4.8V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
DC CHARACTERISTICS
Supply Voltage
V_DD
During normal operation
During OTP ROM programming
2.6
-
4.8
V
2.8
-
4.8
V
Run Mode Supply Current
(exclude I/O current)
I_DD V_DD = 4.2V
V_DD = 4.8V
Sleep Mode Supply Current
I_DDS V_DD = 4.2V, XSD pin floating
OTP Programming Mode Supply Current I_DDP For ~ 1.8ms duration per write operation
Internal Regulated Supply Voltage
V_RG Observable only in test mode
Internal OTP ROM Programming Voltage V_PP Observable only in test mode
POR Release Threshold
V_POR+
POR Assertion Threshold
V_POR-
XSD PIN CHARACTERISTICS
-
110 140
μA
-
120 160
μA
-
0.15 0.5
μA
-
250 500
μA
2.3
2.5
2.7
V
11
12
13
V
1.9
2.2
2.4
V
1.5
1.8
2.1
V
XSD Input Low Voltage
V_IL
XSD Input High Voltage
V_IH
-0.4
-
0.5
V
1.5
-
V_DD+
V
0.4V
XSD Input Hysteresis
V_HYS
XSD Internal Pull-Down Current
I_PD V_DD = 2.6V
V_DD = 4.2V
V_DD = 4.8V
XSD Output Low Voltage
V_OL I_OL = 1mA
XSD Input Transition Time
t_X 10% to 90% transition time
XSD Output Fall Time
t_F 90% to 10%, C_LOAD = 12pF
XSD Pin Capacitance
C_PIN
XSD BUS TIMING CHARACTERISTICS (Refer to XSD Bus Symbol Timing Definitions Tables)
-
400
-
mV
-
0.8
-
μA
-
1.2
2.0
μA
-
1.8
2.5
μA
-
-
0.4
V
-
-
2
μs
-
-
50
ns
-
6
-
pF
Programming Bit Rate
x = 0.5 to 4
2.89
-
23.12 kHz
XSD Input Deglitch Time
T_WDG Pulse width narrower than the deglitch time will not
7
-
20
μs
cause the device to wake up
3
FN9201.1
January 17, 2007